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TSMC and NYCU Cut Gate-Dielectric Bottleneck with 0.42 nm Atomic Buffer

The team deposited an epitaxial aluminium film on CVD-grown monolayer MoS2 and oxidised it in place, creating a 0.42 nm aluminium-oxide buffer that enables a uniform high-κ hafnium-oxide dielectric, delivering nanometre-scale equivalent oxide thickness, low leakage and near-zero hysteresis.

Bharat · 4 min read